View APTGF50DH60T1G_4709469.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGF50DH60T1G
Asymmetrical - Bridge NPT IGBT Power Module
VCES = 600V IC = 50A* @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 65* 50* 230 20 250 100A @ 500V Unit V A
April, 2009 1-7 APTGF50DH60T1G - Rev 0
V W
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF50DH60T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 225 A Max Unit A V V nA Unit pF
1.7 4
2.0 2.2
Dynamic Characteristics
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 VGE = 15V Tj = 125C VBus = 400V IC = 50A Tj = 125C RG = 2.7 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/s 30 1.8 2.2 1.5 25 160 35 480 Min 600 VR=600V 25 500 2.2 V
April, 2009 2-7 APTGF50DH60T1G - Rev 0
Min
nC
ns
ns
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
CR1 & CR4 are IGBT protection diodes only
www.microsemi.com
APTGF50DH60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.5 1.2 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTGF50DH60T1G - Rev 0
April, 2009
APTGF50DH60T1G
Typical IGBT Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
75
TJ=25C TJ=125C
75
TJ=25C
50
50
TJ=125C
25
25
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 150 125 100 75 50 25
TJ=25C
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 50A TJ = 25C VCE=120V VCE=300V VCE=480V
4
18 VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
TJ=125C
0 0 1 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 2 10
25
50
75
100 125 150 175 200
Gate Charge (nC) DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 25 50 75 100 125
70 60 50 40 30 20 10 0 25 50 75 100 125 150
TC, Case Temperature (C)
1.10
1.00
0.90
0.80 TJ, Junction Temperature (C)
www.microsemi.com
4-7
APTGF50DH60T1G - Rev 0
April, 2009
APTGF50DH60T1G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60
VGE = 15V
Turn-Off Delay Time vs Collector Current 175 150 125 100 75 50 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7 VCE = 400V RG = 2.7 VGE=15V, TJ=125C
50
40
Tj = 125C VCE = 400V RG = 2.7
30
VGE=15V, TJ=25C
20 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50
VCE = 400V RG = 2.7
60 50
tf, Fall Time (ns)
tr, Rise Time (ns)
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
VGE=15V, TJ=125C
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
TJ = 125C
TJ = 25C
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
2.5 2 1.5 1 0.5 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 2.7
1.5 1 0.5 0 0
VCE = 400V RG = 2.7
TJ=125C, VGE=15V
TJ = 125C
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 3 Switching Energy Losses (mJ) IC, Collector Current (A) 2.5 2 1.5
Eoff, 50A
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 120
VCE = 400V VGE = 15V TJ= 125C
100 80 60 40 20 0
Eon, 50A
1 0.5
Eon, 50A
0
5 10 15 20 Gate Resistance (Ohms)
25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
www.microsemi.com
5-7
APTGF50DH60T1G - Rev 0
0
April, 2009
APTGF50DH60T1G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Operating Frequency vs Collector Current
240 200 160 120 80 40 0 0 20 40 60 80 100
IC, Collector Current (A)
hard switching ZVS ZCS VCE = 400V D = 50% RG = 2.7 TJ = 125C TC= 75C
Cies
1000
Coes Cres
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0 0.00001
www.microsemi.com
6-7
APTGF50DH60T1G - Rev 0
April, 2009
APTGF50DH60T1G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 120 IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V TJ=25C TJ=125C
175
trr, Reverse Recovery Time (ns)
Trr vs. Current Rate of Charge
TJ=125C VR=400V
150 125 100 75 50 0 200 400 600 800
60 A 30 A 15 A
1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge
TJ=125C VR=400V 60 A 15 A 30 A
QRR, Reverse Recovery Charge (C)
60 A
IRRM, Reverse Recovery Current (A)
1.5
30 25 20 15 10 5 0 0
1.0
30 A 15 A
0.5
0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 200 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (C)
Duty Cycle = 0.5 TJ=175C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
7-7
APTGF50DH60T1G - Rev 0
April, 2009

▲Up To Search▲

Price & Availability of APTGF50DH60T1G

	To Download APTGF50DH60T1G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .